Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications
2014 (English)In: Journal of Alloys and Compounds, ISSN 0925-8388, Vol. 585, 94-97 p.Article in journal (Refereed) Published
ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0001) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV-Visible spectrometer. From the plot for (alpha h upsilon)(2) vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85 eV with increasing Se concentration.
Place, publisher, year, edition, pages
2014. Vol. 585, 94-97 p.
ZnO, Selenium, PLD, Band gap engineering
IdentifiersURN: urn:nbn:se:uu:diva-213442DOI: 10.1016/j.jallcom.2013.09.134ISI: 000327492600015OAI: oai:DiVA.org:uu-213442DiVA: diva2:683549