uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Show others and affiliations
2013 (English)In: CrysteEngComm, ISSN 1466-8033, Vol. 15, no 47, 10278-10286 p.Article in journal (Refereed) Published
Abstract [en]

In this work, tin selenide thin films (SnSex) were grown on soda lime glass substrates by selenization of dc magnetron sputtered Sn metallic precursors. Selenization was performed at maximum temperatures in the range 300 degrees C to 570 degrees C. The thickness and the composition of the films were analysed using step profilometry and energy dispersive spectroscopy, respectively. The films were structurally and optically investigated by X-ray diffraction, Raman spectroscopy and optical transmittance and reflectance measurements. X-Ray diffraction patterns suggest that for temperatures between 300 degrees C and 470 degrees C, the films are composed of the hexagonal-SnSe2 phase. By increasing the temperature, the films selenized at maximum temperatures of 530 degrees C and 570 degrees C show orthorhombic-SnSe as the dominant phase with a preferential crystal orientation along the (400) crystallographic plane. Raman scattering analysis allowed the assignment of peaks at 119 cm(-1) and 185 cm(-1) to the hexagonal-SnSe2 phase and those at 108 cm(-1), 130 cm(-1) and 150 cm(-1) to the orthorhombic-SnSe phase. All samples presented traces of condensed amorphous Se with a characteristic Raman peak located at 255 cm(-1). From optical measurements, the estimated band gap energies for hexagonal-SnSe2 were close to 0.9 eV and 1.7 eV for indirect forbidden and direct transitions, respectively. The samples with the dominant orthorhombic-SnSe phase presented estimated band gap energies of 0.95 eV and 1.15 eV for indirect allowed and direct allowed transitions, respectively.

Place, publisher, year, edition, pages
2013. Vol. 15, no 47, 10278-10286 p.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
URN: urn:nbn:se:uu:diva-213852DOI: 10.1039/c3ce41537fISI: 000327249000020OAI: oai:DiVA.org:uu-213852DiVA: diva2:683555
Available from: 2014-01-05 Created: 2014-01-04 Last updated: 2014-02-03Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text
By organisation
Solid State Electronics
In the same journal
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 412 hits
ReferencesLink to record
Permanent link

Direct link