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Millimeter-Wave RF-MEMS SPDT Switch Networks in a SiGe BiCMOS Process Technology
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2012 (English)In: 2012 42nd European Microwave Conference (EuMC), 2012, 1071-1074 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.

Place, publisher, year, edition, pages
2012. 1071-1074 p.
Series
European Microwave Conference, ISSN 2325-0305
Keyword [en]
Millimeter-wave, radio frequency microelectromechanical systems, silicon germanium, switches
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-213884ISI: 000325100700271ISBN: 978-2-87487-026-2 (print)OAI: oai:DiVA.org:uu-213884DiVA: diva2:683607
Conference
42nd European Microwave Conference (EuMC), OCT 28-NOV 02, 2012, Amsterdam, NETHERLANDS
Available from: 2014-01-05 Created: 2014-01-05 Last updated: 2015-03-09Bibliographically approved
In thesis
1. Reconfigurable and Wideband Receiver Components for System-on-Chip Millimetre-Wave Radiometer Front-Ends
Open this publication in new window or tab >>Reconfigurable and Wideband Receiver Components for System-on-Chip Millimetre-Wave Radiometer Front-Ends
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis presents solutions and studies related to the design of reconfigurable and wideband receiver circuits for system-on-chip (SoC) radiometer front-ends within the millimetre-wave (mm-wave) range. Whereas many of today’s mm-wave front-ends are bulky and costly due to having discrete RF components, single-chip receiver modules could potentially result in a wider use for emerging applications such as wireless communication, short range radar and passive imaging security sensors if realised with adequate performances and at a lower cost. Three main topics are considered in this thesis, monolithic integration of low-loss RF-MEMS (Dicke) switch networks and switched LNAs in MMIC/RFIC foundry processes, designs of SiGe wideband (IF) amplifier and broadband power detectors up to W-band (75-110 GHz).

Low-loss and high isolation GaAs and SiGe RF-MEMS switch networks were designed and characterised for the 30-110 GHz range. A GaAs MEMS Dicke switch network has a measured minimum loss of 1 dB and maximum isolation of 19 dB at 70-96 GHz, respectively, making it a potential candidate in Dicke switched radiometer receivers. Furthermore, single-chip 30 GHz and W-band MEMS Dicke switched LNA designs have been realised for the first time in SiGe BiCMOS and GaAs mHEMT processes, respectively.

For a targeted 94 GHz passive imaging application two different receiver topologies have been investigated based on direct-detection and direct-conversion (heterodyne) architectures. An optimised detector design fabricated in a 0.13 μm SiGe process achieves a more wideband input matching than earlier silicon W-band detectors and is competitive with reported III-V W-band detectors in terms of a higher responsivity and similar NEP.

A SiGe 2-37 GHz high-gain differential (IF) amplifier design achieves a more wideband matching and an order of magnitude higher linearity than a recent single-ended SiGe LNA. The SiGe IF amplifier was integrated on-chip with a power detector in a 5-35 GHz IF section. Their broadband properties compared with other IF amplifier/detector RFICs, make them suitable for W-band down-conversion receivers with a larger pre-detection bandwidth and improved sensitivity. The experimental results successfully demonstrate the feasibility of the SiGe 5-35 GHz IF section for high performance SoC W-band radiometers using a more wideband heterodyne receiver architecture.

 

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2015. 94 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1220
Keyword
Reconfigurable, Wideband, Receivers, Millimetre-Wave, Radiometers, System-on-Chip, Passive Imaging.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Microwave Technology
Identifiers
urn:nbn:se:uu:diva-239435 (URN)978-91-554-9145-1 (ISBN)
Public defence
2015-02-27, Häggsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (English)
Opponent
Supervisors
Available from: 2015-02-06 Created: 2014-12-24 Last updated: 2015-03-09

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Reyaz, Shakila BintMalmqvist, RobertRydberg, Anders

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