Millimeter-Wave RF-MEMS SPDT Switch Networks in a SiGe BiCMOS Process Technology
2012 (English)In: 2012 42nd European Microwave Conference (EuMC), 2012, 1071-1074 p.Conference paper (Refereed)
This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.
Place, publisher, year, edition, pages
2012. 1071-1074 p.
, European Microwave Conference, ISSN 2325-0305
Millimeter-wave, radio frequency microelectromechanical systems, silicon germanium, switches
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-213884ISI: 000325100700271ISBN: 978-2-87487-026-2OAI: oai:DiVA.org:uu-213884DiVA: diva2:683607
42nd European Microwave Conference (EuMC), OCT 28-NOV 02, 2012, Amsterdam, NETHERLANDS