Power Performance of 65 nm CMOS Integrated LDMOS Transistors at WLAN and X-band Frequencies
2016 (English)In: International journal of microwave and wireless technologies, ISSN 1759-0795, E-ISSN 1759-0787, Vol. 8, no 2, 135-141 p.Article in journal (Refereed) Published
Laterally diffused metal oxide semiconductor (LDMOS) transistors with 10V breakdown voltage have been implemented in a 65nm Complementary metal oxide semiconductor (CMOS) process without extra masks or process steps. Radio frequency (RF) performance for Wireless local area network (WLAN) frequencies and in X-band at 8GHz is investigated by load-pull measurements in class AB operation for both 3.3 and 5V supply voltage. Results at 2.45GHz showed 290mW/mm output power density with 17dB linear gain and over 45% power added efficiency (PAE) at 4dB compression at a supply voltage of 5V. Furthermore, results in X-band at 8GHz show 8dB linear gain, 320mW/mm output power density and over 22% PAE at 4dB compression. Third-order intermodulation measurements at 8GHz revealed OIP3 of 18.9 and 21.9dBm at 3.3 and 5V, respectively. The transistors were also tested for reliability which showed no drift in quiescent current after 26h of DC stress while high-power RF stress showed only small extrapolated drift at 10 years in output power density. This is to the authors' knowledge the first time high output power density in X-band is demonstrated for integrated LDMOS transistors manufactured in a 65nm CMOS process without extra process steps.
Place, publisher, year, edition, pages
2016. Vol. 8, no 2, 135-141 p.
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-215334DOI: 10.1017/S1759078714001603ISI: 000370689000002OAI: oai:DiVA.org:uu-215334DiVA: diva2:686889