Negative differential resistance in magnetic tunnel junction systems
2014 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 251, no 1, 172-177 p.Article in journal (Refereed) Published
We study the electrophysical properties of the Fe/MgO/Femagnetic tunnel junctions (MTJ) with impurities. Samplestructures are fabricated on top of fine-crystalline glass–ceramicsubstrates by e-beam evaporation in a relatively low vacuum(~10-4 Torr). The influence of the first magnetic layerfabrication conditions on the degradation of the MTJ isexplained by the interlayer diffusion. Various models ofelectrophysical processes in MTJ on polycrystalline substratesare discussed. The current–voltage (I–V) characteristics of thefabricated structures are found to exhibit a region with negativedifferential resistance, similar to the one in tunneling diodes.We explain this phenomenon by the formation of excitons inthe MgO layer modified by the conductive impurity atoms andtheir diffusion. The obtained results will be useful in thedevelopment of MRAM devices containing MTJs andtunneling diodes.
Place, publisher, year, edition, pages
2014. Vol. 251, no 1, 172-177 p.
magnetic properties, magnetic tunnel junctions, negative differential resistance, polycrystalline materials, thin films
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:uu:diva-215352DOI: 10.1002/pssb.201349258OAI: oai:DiVA.org:uu-215352DiVA: diva2:687034