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The effect of Mo back contact ageing on Cu(In,Ga)Se-2 thin-film solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2014 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 22, no 1, 83-89 p.Article in journal (Refereed) Published
Abstract [en]

In this work, we investigate the effect of ageing Mo-coated substrates in a dry and N-2 flooded cabinet. The influence was studied by preparing Cu(In,Ga)Se-2 solar cells and by comparing the electrical performance with devices where the Mo layer was not aged. The measurements used for this study were current-voltage (J-V), external quantum efficiency (EQE), secondary ion mass spectroscopy (SIMS) and capacitance-voltage (C-V). It was concluded that devices prepared with the aged Mo layer have, in average, an increase of 0.8% in efficiency compared with devices that had a fresh Mo layer. Devices with aged Mo exhibited a nominal increase of 12.5mV of open circuit voltage, a decrease of 1.1mA/cm(-2) of short circuit current and a fill factor increase of 2.4%. Heat treatment of fresh Mo layers in oxygen atmosphere was also studied as an alternative to ageing and was shown to provide a similar effect to the aged device's performance. 

Place, publisher, year, edition, pages
2014. Vol. 22, no 1, 83-89 p.
Keyword [en]
Cu(In, Ga)Se-2, CIGS, thin-film solar cells, molybdenum (Mo), chalcopyrites
National Category
Natural Sciences Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-216062DOI: 10.1002/pip.2360ISI: 000328248500011OAI: oai:DiVA.org:uu-216062DiVA: diva2:689172
Available from: 2014-01-20 Created: 2014-01-17 Last updated: 2017-12-06Bibliographically approved

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Fjällström, ViktorHultqvist, AdamSzaniawski, PiotrZimmermann, UweEdoff, Marika

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