uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High Voltage LDMOS Transistors for Increasing RF Power Density and Gain
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Show others and affiliations
2001 (English)In: GHz2001 Symposium, Nov. 26-27, 2001Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2001.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-41074OAI: oai:DiVA.org:uu-41074DiVA: diva2:68975
Conference
GHz2001 Symposium
Available from: 2007-02-27 Created: 2007-02-27 Last updated: 2010-02-15Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Olsson, JörgenVestling, LarsEklund, Klas-Håkan

Search in DiVA

By author/editor
Olsson, JörgenVestling, LarsEklund, Klas-Håkan
By organisation
Solid State Electronics
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 748 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf