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Low temperature plasma assisted InP-to-Si wafer bonding: an alternative to heteroepitaxial growth
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/MST.
2001 (English)In: 6th Int. Symp. on Semicond. Wafer Bonding: Sci. Technol. and Appl. at The 2001 Joint Int. Meeting, The 200th Meeting of the Electrochem. Soc., Inc. and the 52nd Ann. Meeting of the Int. Soc. of Electrochem, San Francisco, CA, USA, Sept. 2-7, 2001, Abs.#1454- p.Conference paper, Published paper (Refereed)
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2001. Abs.#1454- p.
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URN: urn:nbn:se:uu:diva-41103OAI: oai:DiVA.org:uu-41103DiVA: diva2:69004
Available from: 2008-10-17 Created: 2008-10-17

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