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Low-temperature epitaxial growth of metal carbides using fullerenes
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
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2001 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 142-144, 817-822 p.Article in journal, Meeting abstract (Refereed) Published
Abstract [en]

Epitaxial transition metal carbides can be deposited at low temperatures by simultaneous evaporation of C60 and either metal e-beam evaporation or metal d.c. magnetron sputtering. Hitherto, epitaxial films of TiC, VC, NbC, MoC, W2C and WC have been deposited on MgO(100), MgO(111) and in some cases 6H- and 4H-SiC(0001). Epitaxial TiC films with a good quality have been deposited at temperatures as low as 100°C with metal sputtering, while somewhat higher temperatures (>200°C) are required for the other metals. In general, the plasma-assisted process allows lower deposition temperatures than the co-evaporation process. Most carbides can be deposited in a wide range of compositions within their homogeneity ranges by a fine-tuning of the Me/C60 flux. However, the results suggest that the formation of free surface carbon can be a limiting factor. The processes have also been used to deposit superlattices of TiC/NbC and TiC/VC at 400–500°C as well as epitaxial ternary TixV1−xCy films. Furthermore, epitaxial films of ternary carbides with well-controlled metal concentration profiles can be deposited at temperatures below 500°C.

Place, publisher, year, edition, pages
2001. Vol. 142-144, 817-822 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-41477DOI: 10.1016/S0257-8972(01)01111-2OAI: oai:DiVA.org:uu-41477DiVA: diva2:69378
Conference
7th International Conference on Plasma Surface Engineering, September 17 - 21, 2000, Garmisch-Partenkirchen, Germany
Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2017-12-06Bibliographically approved

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Jansson, U

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