Characterization of dielectric properties of polycrystalline aluminum nitride for high temperature wireless sensor nodes
2013 (English)In: 13th International Conference on Micro And Nanotechnology for Power Generation and Energy Conversion Applications (Powermems 2013), 2013Conference paper (Refereed)
An aluminium nitride (AIN) passive resonance circuit intended for thermally matched high temperature wireless sensor nodes (WSN) was manufactured using thick-film technology. Characterization was done for temperatures up to 900 C in both a hot-chuck for frequencies below 5 MHz, and using wireless readings of resonating circuits at 15 MHz, 59 MHz, and 116 MHz. The substrate for the circuits was sintered polycrystalline AIN. Using a simplified model for the resonators where the main contribution of the frequency-shift was considered to come from a shift of the dielectric constant for these frequencies, the temperature dependency of the dielectric constant for AIN was found to decrease with increasing frequency up to 15 MHz. With an observed frequency shift of 0.04% at 15 MHz, and up to 0.56% at 59 MHz over a temperature range of 900 C, AIN looks as a promising material for integration of resonance circuits directly on the substrate.
Place, publisher, year, edition, pages
, Journal of Physics Conference Series, ISSN 1742-6588 ; 476
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-218528DOI: 10.1088/1742-6596/476/1/012101ISI: 000329347500100OAI: oai:DiVA.org:uu-218528DiVA: diva2:696339
13th International Conference on Micro- and Nano-Technology for Power Generation and Energy Conversion Applications (PowerMEMS), DEC 03-06, 2013, London, ENGLAND