A low-temperature order-disorder transition in Cu2ZnSnS4 thin films
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 4, 041911- p.Article in journal (Refereed) Published
Cu2ZnSnS4(CZTS) is an interesting material for sustainable photovoltaics, but efficiencies are limitedby the low open-circuit voltage. A possible cause of this is disorder among the Cu and Zn cations, aphenomenon which is difficult to detect by standard techniques. We show that this issue can beovercome using near-resonant Raman scattering, which lets us estimate a critical temperature of 533±10 K for the transition between ordered and disordered CZTS. These findings have deepsignificance for the synthesis of high-quality material, and pave the way for quantitative investigationof the impact of disorder on the performance of CZTS-based solar cells.
Place, publisher, year, edition, pages
2014. Vol. 104, no 4, 041911- p.
Materials Chemistry Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-219700DOI: 10.1063/1.4863685ISI: 000331209900030OAI: oai:DiVA.org:uu-219700DiVA: diva2:702925
FunderSwedish Research Council