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High performance transmit/receive modules in 0.13 um SiGe:C BiCMOS for short range F-band MIMO radars
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2014 (English)In: 2014 IEEE MTT-S International Microwave Symposium (IMS), 2014Conference paper, Abstract (Refereed)
Abstract [en]

Transmit and Receive (TX/RX) F-band radar modules are presented. Both modules are implemented in a state of the art SiGe:C BiCMOS featuring high-speed HBTs with f(T)/f(max) of 300/500 GHz. The TX is based on a frequency octupler that consists of a cascade of three Gilbert cells, covering the upper F-band from 120-140 GHz and providing differential output power of up to 6 dBm, the highest values reported to date for BiCMOS. The RX uses the identical frequency octupler followed by a mixer, transformer and a differential LNA, giving altogether conversion gain of 25 dB. Both chips are packaged and connected to off-chip patch antennas using bondwire interconnects with dedicated compensation structures. Initial measurement trials proved full functionality of the realized frontend across 114-152 GHz. It has also been demonstrated that wire-bonding, when properly designed, is still an attractive solution for chip to antenna interconnects even above 110 GHz.

Place, publisher, year, edition, pages
, IEEE MTT-S International Microwave Symposium, ISSN 0149-645X
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
URN: urn:nbn:se:uu:diva-220016ISI: 000363283700192ISBN: 978-1-4799-3869-8OAI: oai:DiVA.org:uu-220016DiVA: diva2:703821
IEEE MTT-S International Microwave Symposium (IMS), Jun 01-06, 2014, Tampa, FL
Available from: 2014-03-10 Created: 2014-03-10 Last updated: 2015-12-14Bibliographically approved

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Dancila, DragosRydberg, Anders
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