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Interaction of bipolaron with the H2O/O-2 redox couple causes current hysteresis in organic thin-film transistors
Fudan University. (Department of Microelectronics)
Fudan University. (Department of Microelectronics)
Fudan Univeristy. (Department of Microelectronics)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2014 (English)In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 5, 3185- p.Article in journal (Refereed) Published
Abstract [en]

Hysteresis in the current–voltage characteristics is one of the major obstacles to the implementation of organic thin-film transistors in large-area integrated circuits. The hysteresis has been correlated either extrinsically to various charge-trapping/transfer mechanisms arising from gate dielectrics or surrounding ambience or intrinsically to the polaron–bipolaron reaction in low-mobility conjugated polymer thin-film transistors. However, a comprehensive understanding essential for developing viable solutions to eliminate hysteresis is yet to be established. By embedding carbon nanotubes in the polymer-based conduction channel of various lengths, here we show that the bipolaron formation/recombination combined with the H2O/O2 electrochemical reaction is responsible for the hysteresis in organic thin-film transistors. The bipolaron-induced hysteresis is a thermally activated process with an apparent activation energy of 0.29 eV for the bipolaron dissociation. This finding leads to a hysteresis model that is generally valid for thin-film transistors with both band transport and hopping conduction in semiconducting thin films.

Place, publisher, year, edition, pages
2014. Vol. 5, 3185- p.
National Category
Nano Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-220191DOI: 10.1038/ncomms4185ISI: 000331118200002OAI: oai:DiVA.org:uu-220191DiVA: diva2:704374
Available from: 2014-03-12 Created: 2014-03-12 Last updated: 2017-12-05Bibliographically approved

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Zhang, Shili

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