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On the Thermal Stability of Atomic Layer Deposited (ALD) TiN as Gate Electrode in MOS Devices
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
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2002 (English)In: IEEE SISC, December, 2002Conference paper, Published paper (Refereed)
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2002.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-42641OAI: oai:DiVA.org:uu-42641DiVA: diva2:70543
Available from: 2007-02-26 Created: 2007-02-26

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