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Comparison Between Si-LDMOS and GaN-Based Microwave Power Transistors
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2002 (English)In: Proc of IEEE Lester Eastman Conference on High Performance Devices, 2002, 149-154 p.Conference paper, Published paper (Refereed)
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2002. 149-154 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-42642OAI: oai:DiVA.org:uu-42642DiVA: diva2:70544
Available from: 2007-02-26 Created: 2007-02-26

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Olsson, JörgenEklund, Klas-Håkan

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