Flexible Thin-Flm Transistors on Planarized Parylene Substrate with Recessed Individual Backgates
2014 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 94, 11-14 p.Article in journal (Refereed) Published
With novel design and fabrication techniques, InGaZnO-based thin-film transistors with individual recessed back-gates were fabricated on flexible and transparent polymer substrates. The key components for the fabrication include using a machine park optimized for Si process technology, low-adhesion, room temperature parylene coating, AlOx–ZnOx(Al)-based inorganic lift-off process, and a recessed individual gate concept. Transistors were built to validate the viability of the design as well as aforementioned techniques. The demonstrated approach could open up new design possibilities for cheap, flexible devices, while the recessed-gate concept shows promise towards the use of more brittle layers in our flexible thin-film electronic devices.
Place, publisher, year, edition, pages
2014. Vol. 94, 11-14 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering Nano Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-220577DOI: 10.1016/j.sse.2014.01.001ISI: 000334097000003OAI: oai:DiVA.org:uu-220577DiVA: diva2:705683