Reactive ZnO/Ti/ZnO interfaces studied by hard x-ray photoelectron spectroscopy
2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, no 4, 043714-043714-7 p.Article in journal (Refereed) Published
The chemistry and intermixing at buried interfaces in sputter deposited ZnO/Ti/ZnO thin layers were studied by hard x-ray photoelectron spectroscopy. The long mean free path of the photoelectrons allowed for detailed studies of the oxidation state, band bending effects, and intrinsic doping of the buried interfaces. Oxidation of the Ti layer was observed when ZnO was deposited on top. When Ti is deposited onto ZnO, Zn Auger peaks acquire a metallic character indicating a strong reduction of ZnO at the interface. Annealing of the stack at 200 °C results in further reduction of ZnO and oxidation of Ti. Above 300 °C, oxygen transport from the bulk of the ZnO layer takes place, leading to re-oxidation of ZnO at the interface and further oxidation of Ti layer. Heating above 500 °C leads to an intermixing of the layers and the formation of a ZnxTiOy compound.
Place, publisher, year, edition, pages
2014. Vol. 115, no 4, 043714-043714-7 p.
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:uu:diva-220603DOI: 10.1063/1.4854636ISI: 000331210800061OAI: oai:DiVA.org:uu-220603DiVA: diva2:705748