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Understanding Interfacial Charge Transfer between Metallic PEDOT Counter Electrodes and a Cobalt Redox Shuttle in Dye-Sensitized Solar Cells
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Physical Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Physical Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Physical Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2014 (English)In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 6, no 3, 2074-2079 p.Article in journal (Refereed) Published
Abstract [en]

Conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) doped with iron(111) tris-p-toluenesulfonate (PEDOT:Tos) having metallic conductivity was coated onto fluorine-doped tin oxide (FTO) glass and plain glass substrates and used as a counter electrode (CE) in a dye-sensitized solar cell (DSC) with a [Co(bpy)(3)](3+/2+) complex redox shuttle. DSCs with PEDOT:Tos/glass CE yielded power conversion efficiencies (PCE) of 6.3%, similar to that of DSCs with platinized FTO glass CE (6.1%). The PEDOT:Tos-based counter electrodes had 5 to 10 times lower charge-transfer resistance than the Pt/FTO CE in DSCs, as analyzed by impedance spectroscopy. More detailed studies in symmetrical CE-CE cells showed that the PEDOT:Tos layers are nanoporous. Not all internal area can be used catalytically under solar cell conditions and effective charge-transfer resistance was similar to that of Pt/FTO.

Place, publisher, year, edition, pages
2014. Vol. 6, no 3, 2074-2079 p.
Keyword [en]
dye-sensitized solar cells, counter electrode, electrocatalytic activity, metallic PEDOT, tosylate, Co complex electrolyte
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-220985DOI: 10.1021/am405108dISI: 000331493200098OAI: oai:DiVA.org:uu-220985DiVA: diva2:707702
Available from: 2014-03-25 Created: 2014-03-24 Last updated: 2017-12-05Bibliographically approved

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Park, Byung-wookPazoki, MeysamAitola, KerttuJeong, SeungheeJohansson, Erik M. J.Hagfeldt, AndersBoschloo, Gerrit

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Physical ChemistrySolid State Electronics
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