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Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2012 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 59, 2027- p.Article in journal, Letter (Refereed) Published
Place, publisher, year, edition, pages
2012. Vol. 59, 2027- p.
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Engineering and Technology
URN: urn:nbn:se:uu:diva-222360OAI: oai:DiVA.org:uu-222360DiVA: diva2:711533
Available from: 2014-04-10 Created: 2014-04-10 Last updated: 2014-04-10

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