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High-κ/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 31, 275-277 p.Article in journal, Letter (Refereed) Published
Place, publisher, year, edition, pages
2010. Vol. 31, 275-277 p.
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Engineering and Technology
URN: urn:nbn:se:uu:diva-222365OAI: oai:DiVA.org:uu-222365DiVA: diva2:711536
Available from: 2014-04-10 Created: 2014-04-10 Last updated: 2014-04-10

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