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Graded and alloyed II-VI semiconductors for photovoltaic buffer layers grown by atomic layer deposition (ALD)
Stanford University.
Stanford University.ORCID iD: C-1405-2008
Stanford University.
Stanford University.
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2011 (English)Conference paper (Refereed)
Place, publisher, year, edition, pages
Seattle, WA: IEEE , 2011. 002691-002695 p.
Keyword [en]
II-VI semiconductors, atomic layer deposition, buffer layers, cadmium compounds, energy gap, extinction coefficients, photovoltaic effects, refractive index, semiconductor growth, semiconductor thin films, solar absorber-convertors, stoichiometry, wide band gap semiconductors, zinc compounds, CBD films, CdxZn1-xOyS1-y, CuInS2, IV curves, absorbers, alloyed ll-VI semiconductors, chemical bath deposition films, chemical properties, crystal phases, diethylzinc, dimethylcadmium, graded ll-VI semiconductors, material properties, mixed film deposition, optical constants, optical properties, photovoltaic buffer layers, quantum efficiency measurement, temperature 150 degC, Optical buffering, Optical films, Optical variables control, Photonic band gap
National Category
Materials Engineering
URN: urn:nbn:se:uu:diva-222514DOI: 10.1109/PVSC.2011.6186503OAI: oai:DiVA.org:uu-222514DiVA: diva2:711814
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Available from: 2014-04-11 Created: 2014-04-11 Last updated: 2015-12-07

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Hägglund, Carl
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