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PREVENTION OF OXYGEN ABSORPTION INTO HIGH-K GATE DIELECTRIC OF SILICON-ON-INSULATOR BASED FINFET DEVICES
2010 (English)Patent (Other (popular science, discussion, etc.))
Place, publisher, year, edition, pages
2010.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-222557OAI: oai:DiVA.org:uu-222557DiVA: diva2:711843
Patent
US 8283217
Available from: 2014-04-11 Created: 2014-04-11 Last updated: 2014-04-11

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CiteExportLink to record
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  • apa
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