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Tantalum Nitride as Promissing Gate Electrode for MOS Technology
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2010 (English)In: ECS Transactions, ISSN 1938-5862, E-ISSN 1938-6737, Vol. 31, no 1, 319-325 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2010. Vol. 31, no 1, 319-325 p.
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Composite Science and Engineering
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URN: urn:nbn:se:uu:diva-222601DOI: 10.1149/1.3474175OAI: oai:DiVA.org:uu-222601DiVA: diva2:711919
Available from: 2014-04-11 Created: 2014-04-11 Last updated: 2017-12-05Bibliographically approved

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Moreira, Milena

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