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Titanium nitride as promising gate electrode for MOS technology
2012 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 6, 1427-1430 p.Article in journal, Meeting abstract (Refereed) Published
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2012. Vol. 9, no 6, 1427-1430 p.
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Composite Science and Engineering
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URN: urn:nbn:se:uu:diva-222607DOI: 10.1002/pssc.201100506OAI: oai:DiVA.org:uu-222607DiVA: diva2:711925
Note

Special Issue: 13th International Conference on the Formation of Semiconductor Interfaces (ICFSI-13)

Available from: 2014-04-11 Created: 2014-04-11 Last updated: 2017-12-05Bibliographically approved

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Moreira, Milena

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