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Formation of Ga2O3 barrier layer in Cu (InGa) Se2 superstrate devices with ZnO buffer layer
Institute of Energy Conversion, University of Delaware, Newark, DE, 19716, USA .
2013 (English)In: MRS Proceedings, Vol. 1538, 67-72 p.Article in journal (Refereed) Published
Abstract [en]

The junction formation when Cu(InGa)Se2 is deposited onto ZnO in a superstrate configuration (glass/window/buffer/Cu(InGa)Se2/contact) is investigated by x-ray photoelectron spectroscopy and analysis of device behavior. When Cu(InGa)Se2 is deposited on ZnO, a Ga2O3 layer is formed at the interface. Approaches to avoid the formation of this unfavorable interlayer are investigated. This includes modifications of the process to reduce the thermal load during deposition and improvement of the thermal stability of the ZnO buffer layer. It was demonstrated that both lowering of the substrate deposition temperature and deposition of the ZnO buffer layer at elevated temperature limits the Ga2O3 formation. The presence of Ga2O3 at the junction does affect the device behavior, resulting in a kink in JV curves measured under illumination. This behavior is absent in devices with limited Ga2O3 formation.

Place, publisher, year, edition, pages
2013. Vol. 1538, 67-72 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-222893DOI: 10.1557/opl.2013.1007OAI: oai:DiVA.org:uu-222893DiVA: diva2:712467
Available from: 2014-04-15 Created: 2014-04-15 Last updated: 2014-04-16Bibliographically approved

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Larsen, Jes K

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