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Preparation of CuGaSe 2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu–Ga precursor layers from ionic liquids
Université du Luxembourg, Laboratoire Photovoltaïque, 41, rue du Brill, L-4422 Belvaux, Luxembourg.
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2011 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 519, no 21, 7254-7258 p.Article in journal (Refereed) Published
Abstract [en]

CuGaSe2 absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa2 alloying during the electrodeposition and CuGaSe2 formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe2 absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.

Place, publisher, year, edition, pages
2011. Vol. 519, no 21, 7254-7258 p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:uu:diva-222895DOI: 10.1016/j.tsf.2011.01.135OAI: oai:DiVA.org:uu-222895DiVA: diva2:712472
Available from: 2014-04-15 Created: 2014-04-15 Last updated: 2014-04-16Bibliographically approved

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Larsen, Jes K
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