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Photoinduced current transient spectroscopy of defect levels in CuInSe2 and CuGaSe2 epitaxial and polycrystalline layers
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2012 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 45, no 33, 335101- p.Article in journal (Refereed) Published
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2012. Vol. 45, no 33, 335101- p.
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Condensed Matter Physics Engineering and Technology
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URN: urn:nbn:se:uu:diva-222887OAI: oai:DiVA.org:uu-222887DiVA: diva2:712476
Available from: 2014-04-15 Created: 2014-04-15 Last updated: 2017-12-05

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Larsen, Jes K

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