uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Defect levels in the epitaxial and polycrystalline CuGaSe2 by photocurrent and capacitance methods
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Show others and affiliations
2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 10, p. 103711-Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2011. Vol. 110, no 10, p. 103711-
National Category
Condensed Matter Physics Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-222884OAI: oai:DiVA.org:uu-222884DiVA, id: diva2:712478
Available from: 2014-04-15 Created: 2014-04-15 Last updated: 2017-12-05

Open Access in DiVA

No full text in DiVA

Authority records BETA

Larsen, Jes K

Search in DiVA

By author/editor
Larsen, Jes K
By organisation
Solid State Electronics
In the same journal
Journal of Applied Physics
Condensed Matter PhysicsEngineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 754 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf