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Defect levels in the epitaxial and polycrystalline CuGaSe2 by photocurrent and capacitance methods
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 10, 103711- p.Article in journal (Refereed) Published
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2011. Vol. 110, no 10, 103711- p.
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Condensed Matter Physics Engineering and Technology
URN: urn:nbn:se:uu:diva-222884OAI: oai:DiVA.org:uu-222884DiVA: diva2:712478
Available from: 2014-04-15 Created: 2014-04-15 Last updated: 2014-12-15

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Larsen, Jes K
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