Crystal growth experiments in the systems Ni2MSbO6 (M = Sc, In) using chemical vapour transport reactions: Ni2InSbO6 and NiSb2O6 crystals in the millimetre range
2014 (English)In: Crystal research and technology (1981), ISSN 0232-1300, E-ISSN 1521-4079, Vol. 49, no 2-3, 142-151 p.Article in journal (Refereed) Published
Endothermic chemical vapour transport (CVT) reactions of Ni2MSbO6 (M = Sc, In), using a temperature gradient (T) over bar of 1313 -> 1233 K and HgCl2, HgBr2, PtCl2 or TeCl4 as transport agents, led to growth of Ni2InSbO6 single crystals in the millimetre range, whereas in the case of Ni2ScSbO6 an incongruent dissolution of the solid in the source region was observed, leading to the formation of single crystals of the ternary phase NiSb2O6 in the sink region. The crystal structures of the obtained crystals were refined from single crystal X-ray data with high precision [Ni2InSbO6: R3, Z = 3, a = 5.21640(10) angstrom, c = 14.0142(3) angstrom, 1279 structure factors, 33 parameters, R[F-2 > 2 sigma(F-2)] = 0.0189; NiSb2O6: P4(2)/mnm, Z = 2, a = 4.63910(10) angstrom, c = 9.2182(2) angstrom, 500 structure factors, 19 parameters, R[F-2 > 2 sigma(F-2)] = 0.0145]. Ni2InSbO6 crystallizes in a corundum-related structure, NiSb2O6 in the trirutile structure type. Spontaneous polarization and the ferroelectric transition temperature were estimated from the atomic arrangement and cation displacement along the polar axis in Ni2InSbO6. Magnetic measurements on Ni2InSbO6 evidence an antiferromagnetic transition near T-N = 74 K, with significant magnetic frustration.
Place, publisher, year, edition, pages
2014. Vol. 49, no 2-3, 142-151 p.
crystal growth, chemical vapour transport reactions, structure analysis, Ni2InSbO6, NiSb2O6, physical properties
Engineering and Technology
Research subject Engineering Science with specialization in Solid State Physics
IdentifiersURN: urn:nbn:se:uu:diva-222934DOI: 10.1002/crat.201300337ISI: 000332342700008OAI: oai:DiVA.org:uu-222934DiVA: diva2:713027