The effect of high growth temperature on Cu(In,Ga)Se-2 thin film solar cells
2014 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, Vol. 123, 166-170 p.Article in journal (Refereed) Published
The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga) Se-2 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga]+[In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature.
Place, publisher, year, edition, pages
2014. Vol. 123, 166-170 p.
Photovoltaics, Solar energy, Co-evaporation, Thin film solar cells, Cu(InGa)Se-2 (CIGS)
Natural Sciences Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-224352DOI: 10.1016/j.solmat.2014.01.006ISI: 000333491500021OAI: oai:DiVA.org:uu-224352DiVA: diva2:716995