Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique
2014 (English)In: ECS SOLID STATE LETT, ISSN 2162-8742, Vol. 3, no 5, P65-P68 p.Article in journal (Refereed) Published
The excellent material properties of diamond make it highly desirable for many extreme electronic applications that are out of reach of conventional electronic materials. For commercial diamond devices to become a reality, it is necessary to have an effective surface passivation since the passivation determines the ability of the device to withstand high surface electric fields. In this paper we present data from lateral Time-of-Flight studies on SiO2-passivated intrinsic single-crystalline CVD diamond. The SiO2 films were deposited using three different techniques. The influence of the passivation on hole transport was studied, which resulted in the increase of hole mobilities. The results from the three different passivations are compared. (C) 2014 The Electrochemical Society. All rights reserved.
Place, publisher, year, edition, pages
2014. Vol. 3, no 5, P65-P68 p.
Engineering and Technology
Research subject Engineering Science with specialization in Science of Electricity
IdentifiersURN: urn:nbn:se:uu:diva-224497DOI: 10.1149/2.004405sslISI: 000333803500006OAI: oai:DiVA.org:uu-224497DiVA: diva2:717089