Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films
2002 (English)In: Applied Physics Letters, Vol. 81, no 5, 835-837 p.Article in journal (Refereed) Published
We report on the synthesis and characterization of epitaxial single-crystalline Ti3SiC2 films (Mn + 1AXn-phase). Two original deposition techniques are described, (i) magnetron sputtering from Ti3SiC2 compound target and (ii) sputtering from individual titanium and silicon targets with co-evaporated C60 as carbon source. Epitaxial Ti3SiC2 films of single-crystal quality were grown at 900 °C with both techniques. Epitaxial TiC(111) deposited in situ on MgO(111) by Ti sputtering using C60 as carbon source was used to nucleate the Ti3SiC2 films. The epitaxial relationship was found to be Ti3SiC2(0001)//TiC(111)//MgO(111) with the in-plane orientation Ti3SiC2//TiC//MgO.
Place, publisher, year, edition, pages
2002. Vol. 81, no 5, 835-837 p.
IdentifiersURN: urn:nbn:se:uu:diva-44087DOI: doi:10.1063/1.1494865OAI: oai:DiVA.org:uu-44087DiVA: diva2:71992