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Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H-SiC studied by Rutherford backscattering spectroscopy and nuclear reation analysis
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. ION PHYSICS.
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2002 (English)In: J Appl Phys, Vol. 91, no 10, 6388- p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2002. Vol. 91, no 10, 6388- p.
National Category
Materials Engineering
URN: urn:nbn:se:uu:diva-45026OAI: oai:DiVA.org:uu-45026DiVA: diva2:72933
Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-13

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