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Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
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2014 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 120, p. 174-177Article in journal (Refereed) Published
Abstract [en]

Change of contact resistivity (rho(c)) is monitored for evaluation of Schottky barrier height (SBH) variation induced by dopant segregation (DS). This method is particularly advantageous for metal-semiconductor contacts of small SBH, as it neither requires low-temperature measurement needed in current-voltage characterization of Schottky diodes nor is affected by reverse leakage current often troubling capacitance-voltage characterization. With PtSi contact to both n- and p-type diffusion regions, and the use of opposite or alike dopants implant into pre-formed PtSi films followed by drive-in anneal at different temperatures to induce DS at PtSi/Si interface, the formation of interfacial dipole is confirmed as the responsible cause for modification of effective SBHs thus the increase or decrease of rho(c). A tentative explanation for the change of contact resistivity based on interfacial dipole theory is provided in this work. Influences and interplay of interfacial dipole and space charge on effective SBH are also discussed. (C) 2013 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2014. Vol. 120, p. 174-177
Keywords [en]
Contact resistivity, Dopant segregation, PtSi, Silicide, Schottky barrier height
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-228019DOI: 10.1016/j.mee.2013.09.003ISI: 000336697300029OAI: oai:DiVA.org:uu-228019DiVA, id: diva2:731887
Available from: 2014-07-02 Created: 2014-07-02 Last updated: 2017-12-05Bibliographically approved

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Zhang, Shi-Li

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