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InP and Si Metal-Oxide Semiconductor Structures Fabricated Using Oxygen Plasma Assisted Wafer Bonding
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
2003 (English)In: Journal of Electronic Materials, Vol. 32, no 3, 111-116 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2003. Vol. 32, no 3, 111-116 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-45698OAI: oai:DiVA.org:uu-45698DiVA: diva2:73606
Available from: 2007-02-22 Created: 2007-02-22 Last updated: 2011-01-13

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