Hysteresis-free high rate reactive sputtering of niobium oxide, tantalumoxide, and aluminum oxide
2014 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 2, 041517- p.Article in journal (Refereed) Published
This work reports on experimental studies of reactive sputtering from targets consisting of a metaland its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition rate from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta,and Nb, a similar behavior is expected for most oxides.
Place, publisher, year, edition, pages
2014. Vol. 2, 041517- p.
Reactive sputtering, hysteresis elimination
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-229205DOI: 10.1116/1.4885399ISI: 000338718400029OAI: oai:DiVA.org:uu-229205DiVA: diva2:736173
FunderSwedish Foundation for Strategic Research