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Interface study of CuInSe2/ZnO and Cu(In,Ga)Se2/ZnO devices using ALD ZnO buffer layers
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Analytisk materialfysik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
2003 (English)In: Thin Solid FIlms, Vol. 431-432, 321-325 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2003. Vol. 431-432, 321-325 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-45720OAI: oai:DiVA.org:uu-45720DiVA: diva2:73628
Available from: 2007-04-17 Created: 2007-04-17 Last updated: 2011-01-13

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Platzer Björkman, CharlotteLu, JunStolt, Lars

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