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HfO2 gate dielectrics on strained-Si and strained-Si Ge layers.
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2003 (English)In: Semicond Sci. Technol., no 18, 820-826 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2003. no 18, 820-826 p.
National Category
Inorganic Chemistry
URN: urn:nbn:se:uu:diva-45752OAI: oai:DiVA.org:uu-45752DiVA: diva2:73661
Available from: 2006-03-01 Created: 2006-03-01 Last updated: 2011-01-13

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Hårsta, Anders
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Department of Materials ChemistryInorganic Chemistry
Inorganic Chemistry

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