uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Graphene as a Diffusion Barrier in Galinstan-Solid Metal Contacts
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
Show others and affiliations
2014 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 61, no 8, 2996-3000 p.Article in journal (Refereed) Published
Abstract [en]

This paper presents the use of graphene as a diffusion barrier to a eutectic Ga-In-Sn alloy, i.e., galinstan, for electrical contacts in electronics. Galinstan is known to be incompatible with many conventional metals used for electrical contacts. When galinstan is in direct contact with Al thin films, Al is readily dissolved leading to the formation of Al oxides present on the surface of the galinstan droplets. This reaction is monitored ex situ using several material analysis methods as well as in situ using a simple circuit to follow the time-dependent resistance variation. In the presence of a multilayer graphene diffusion barrier, the Al-galinstan reaction is effectively prevented for galinstan deposited by means of drop casting. When deposited by spray coating, the high-impact momentum of the galinstan droplets causes damage to the multilayer graphene and the Al-galinstan reaction is observed at some defective spots. Nonetheless, the graphene barrier is likely to block the formation of Al oxides at the Al/galinstan interface leading to a stable electrical current in the test circuit.

Place, publisher, year, edition, pages
2014. Vol. 61, no 8, 2996-3000 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Nano Technology
Research subject
Engineering Science with specialization in Electronics; Engineering Science with specialization in Microsystems Technology
Identifiers
URN: urn:nbn:se:uu:diva-229503DOI: 10.1109/TED.2014.2331893ISI: 000342906200056OAI: oai:DiVA.org:uu-229503DiVA: diva2:736871
Available from: 2014-08-10 Created: 2014-08-10 Last updated: 2017-12-05Bibliographically approved
In thesis
1. Graphene Implementation Study in Semiconductor Processing
Open this publication in new window or tab >>Graphene Implementation Study in Semiconductor Processing
2016 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Graphene, with its two-dimensional nature and unique properties, has for over a decade captured enormous interests in both industry and academia. This work tries to answer the question of what would happen to graphene when it is subjected to various processing conditions and how this would affect the graphene functionality. The focus is placed on its ability to withstand different thin-film deposition environments with regard to the implementation of graphene in two application areas: as a diffusion barrier and in electronic devices.

With single-layer graphene films grown in-house by means of chemical vapor deposition (CVD), four techniques among the well-established thin-film deposition methods are studied in detail: atomic layer deposition (ALD), evaporation, sputter-deposition and spray-deposition. And in this order, these methods span a large range of kinetic impact energies from low to high. Graphene is known to have a threshold displacement energy of 22 eV above which carbon atoms are ejected from the lattice. Thus, ALD and evaporation work with energies below this threshold, while sputtering and spraying may involve energies above. The quality of the graphene films undergone the various depositions is mainly evaluated using Raman spectroscopy.

Spray deposition of liquid alloy Ga-In-Sn is shown to require a stack of at least 4 layers of graphene in order to act as an effective barrier to the Ga diffusion after the harsh spray-processing. Sputter-deposition is found to benefit from low substrate temperature and high chamber pressure (thereby low kinetic impact energy) so as to avoid damaging the graphene. Reactive sputtering should be avoided. Evaporation is non-invasiveness with low kinetic impact energy and graphene can be subjected to repeated evaporation and removal steps without losing its integrity. With ALD, the effects on graphene are of different nature and they are investigated in the field-effect-transistor (FET) configuration. The ALD process for deposition of Al2O3 films is found to remove undesired dopants from the prior processing and the Al2O3 films are shown to protect the graphene channel from doping by oxygen. When the substrate is turned hydrophobic by chemical treatment prior to graphene transfer-deposition, a unipolar transistor behavior is obtained.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2016. 62 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1377
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-285249 (URN)978-91-554-9585-5 (ISBN)
Public defence
2016-06-10, 13:15 (English)
Opponent
Supervisors
Available from: 2016-05-19 Created: 2016-04-19 Last updated: 2016-06-01

Open Access in DiVA

fulltext(909 kB)606 downloads
File information
File name FULLTEXT01.pdfFile size 909 kBChecksum SHA-512
c74fcc472734baab771bbefee3726cedafe367af563fbf9d8c51aada2d035a21f105eb58eefcd2806fb833cdfd93b397846422098274f2eb493aad5ea938376f
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Ahlberg, PatrikSeung, Hee JeongJiao, MingzhiWu, ZhigangZhang, Shi-LiZhang, Zhi-Bin

Search in DiVA

By author/editor
Ahlberg, PatrikSeung, Hee JeongJiao, MingzhiWu, ZhigangZhang, Shi-LiZhang, Zhi-Bin
By organisation
Solid State ElectronicsMicrosystems Technology
In the same journal
IEEE Transactions on Electron Devices
Other Electrical Engineering, Electronic Engineering, Information EngineeringNano Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 606 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 1186 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf