A charge transport study in diamond, surface passivated by high-k dielectric oxides
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 20, 202102- p.Article in journal (Refereed) Published
The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.
Place, publisher, year, edition, pages
2014. Vol. 105, no 20, 202102- p.
Physical Sciences Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-229768DOI: 10.1063/1.4901961ISI: 000345513300030OAI: oai:DiVA.org:uu-229768DiVA: diva2:737493