Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS)
2014 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 332, 212-215 p.Article in journal (Refereed) Published
We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. As a model system high-k material stacks made from ultra-thin films of HfO2 grown on a p-type Si (100) substrate with a 0.5 nm SiO2 interface layer have been investigated. By comparison of experimental spectra and computer simulations TOF-MEIS was employed to establish a depth profile of the films and thus obtaining information on stoichiometry and film quality. Nominal film thicknesses were in the range from 1.8 to 12.2 nm. A comparison of the results with those from other MEIS approaches is made. Issues regarding different combinations of composition and stopping power as well as the influence of channeling are discussed. As a supporting method Rutherford-Backscattering spectrometry (RBS) was employed to obtain the areal density of Hf atoms in the films.
Place, publisher, year, edition, pages
2014. Vol. 332, 212-215 p.
MEIS, Hafniumoxide, Thin films, Dielectric, RBS
IdentifiersURN: urn:nbn:se:uu:diva-230241DOI: 10.1016/j.nimb.2014.02.063ISI: 000339131200047OAI: oai:DiVA.org:uu-230241DiVA: diva2:739803
21st International Conference on Ion Beam Analysis (IBA), JUN 23-28, 2013, Seattle, USA