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Dye-sensitized sputtered titanium oxide films for photovoltaic applications: influence of the O2/Ar gas flow ratio during the deposition
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Physical Chemistry. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
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2003 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 76, no 1, 37-56 p.Article in journal (Refereed) Published
Abstract [en]

Titanium oxide films were prepared by reactive DC magnetron sputtering onto SnO2:F coated glass substrates. The O-2/Ar gas flow ratio was kept at a constant value Gamma during the deposition, and a series of films were deposited with 0.050 < Gamma < 0.072. Structural studies were performed by X-ray diffraction and transmission electron microscopy; the structure displayed penniform features with a clear dependence on F. Charge transport in the films was evaluated by use of time-resolved photocurrents; a diffusion model was fitted to the experimental data and two different transport mechanisms were proposed depending on the film stoichiometry. Dye sensitization in cis-dithiocyanato-bis(2,2'-bipyridyl-4,4'-dicarboxylate) ruthenium (II) was performed to evaluate incident photon-to-current conversion efficiency and solar cell properties of the films. These parameters showed a clear dependence on Gamma. Optical measurements gave evidence for the presence of polaron absorption for the film deposited at Gamma = 0.050.

Place, publisher, year, edition, pages
2003. Vol. 76, no 1, 37-56 p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-46220DOI: 10.1016/S0927-0248(02)00215-5OAI: oai:DiVA.org:uu-46220DiVA: diva2:74128
Available from: 2007-02-22 Created: 2007-02-22 Last updated: 2017-12-05Bibliographically approved

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Hagfeldt, AndersNiklasson, G AGranqvist, Claes-Göran

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Hagfeldt, AndersNiklasson, G AGranqvist, Claes-Göran
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Department of Physical ChemistrySolid State PhysicsDepartment of Materials ScienceSolid State Electronics
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