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Optimized growth conditions for Cu(In,Ga)Se2 layers by co-evaporation at high deposition rates
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
2003 (English)In: Material Research Conference, Spring 2003, San Francisco, USA, 2003Conference paper, Published paper (Refereed)
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2003.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-46454OAI: oai:DiVA.org:uu-46454DiVA: diva2:74361
Available from: 2007-02-23 Created: 2007-02-23

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Edoff, Marika EdoffStolt, Lars

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