uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
An investigation of c-HiPIMS discharges during titanium deposition
Laboratory for Nanoscale Materials Science, Empa, Dübendorf, Switzerland.
Chimie des Interactions Plasma-Surface (ChIPS), Université de Mons, Belgium.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.ORCID iD: 0000-0001-8617-4834
Chimie des Interactions Plasma-Surface (ChIPS), Université de Mons, Belgium.
Show others and affiliations
2014 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 258, 631-638 p.Article in journal (Refereed) Published
Abstract [en]

Abstract A modified version of high power impulse magnetron sputtering (HiPIMS) has been used to deposit titanium films at higher deposition rates than for conventional HiPIMS whilst maintaining similar pulse voltages and peak currents. This process, named chopped-HiPIMS (c-HiPIMS) utilises pulses decomposed into several short single pulses instead of single HiPIMS pulses. Experiments show that manipulating the pulse sequence during c-HiPIMS, i.e. the tÎŒon and tÎŒoff times (explained in the glossary) allows for an increase of the deposition rate; increases of up to 150% are reported here for selected conditions. Further, deposition rates higher than those measured using direct current magnetron sputtering are also shown. Investigations by optical emission and optical absorption spectroscopy at the substrate show that the increase of deposition rate is not a consequence of different ion concentrations arriving at the substrate when changing the micro-pulse-off times of c-HiPIMS. Thus alternative reasons for the enhanced deposition rate during c-HiPIMS deposition of metal films are discussed. It is demonstrated that film micro-structure maintains the void free, dense nature typically demonstrated by HiPIMS deposited coatings whilst at enhanced deposition rates. Thus c-HiPIMS allows for the preparation of dense films with the benefit of faster growth rates.

Place, publisher, year, edition, pages
2014. Vol. 258, 631-638 p.
Keyword [en]
HiPIMS, c-HiPIMS, Titanium, Deposition rate, OES, AAS
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-232148DOI: 10.1016/j.surfcoat.2014.08.025ISI: 000346895000077OAI: oai:DiVA.org:uu-232148DiVA: diva2:746707
Available from: 2014-09-14 Created: 2014-09-14 Last updated: 2017-12-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Lewin, Erik

Search in DiVA

By author/editor
Lewin, Erik
By organisation
Inorganic Chemistry
In the same journal
Surface & Coatings Technology
Materials Chemistry

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 991 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf