Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology
2014 (English)In: Metallic Films for Electronic, Optical and Magnetic Applications: Structure, Processing and Properties, Woodhead Publishing Limited, 2014, no 40, 244-301 p.Chapter in book (Refereed)
Metal silicides have become a basic building block in silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs). During the past three decades, several different silicides have served various generations of complementary metal-oxide-semiconductor (CMOS) technology primarily as a low-resistivity solution to parasitic resistances in the three terminals of a MOSFET. The latest developments of CMOS technology have led to a converged utilisation of Ni-silicides for metallisation of the source and drain regions of transistors with 45 and 32 nm channel lengths. These developments have followed a set of basic requirements and fundamental rules for the silicide formation and growth. This chapter provides an overview of the technological developments of contact metallisation in advanced CMOS technology and attempts to project into the near future about the role of metal silicides in extremely scaled CMOS devices with non-planar device architectures. Fundamental aspects critical to past developments and to future projections will be discussed.
Place, publisher, year, edition, pages
Woodhead Publishing Limited, 2014. no 40, 244-301 p.
, Woodhead Publishing Series in Electronic and Optical Materials, ISSN 2050-1501
CMOS technology, metal silicides, device dimensional downscaling, contact resistance, Schottky barrier height
Physical Sciences Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-234222DOI: 10.1533/9780857096296.1.244ISI: 000341643200007ISBN: 978-0-85709-629-6; 978-0-85709-057-7OAI: oai:DiVA.org:uu-234222DiVA: diva2:755821