Thin AlN films deposited by reactive HiPIMS and pulsed DC sputtering – a comparative study
2014 (English)In: 14th International Conference on Plasma Surface Engineering, September 15 - 19, 2014, Garmisch-Partenkirchen, Germany, 2014Conference paper, Poster (Refereed)
High quality wurtzite polycrystalline thin AlN films can be grown at low temperature by reactive magnetron sputtering provided sufficient energy input. Typically, a suitable substrate or a seed layer is used to improve the AlN crystallinity. In this study, thin films grown by pulsed DC (PDCS) and High Power Impulse Magnetron Sputtering (HiPIMS) from an Al target were studied aiming at both higher film quality as well as film deposition in cases where a seed layer is impractical. The deposition process was first characterized with respect to the Ar to N2 gas flow ratio. For selected process conditions, AlN films were prepared with a thickness of about 200 nm. (100) Si and (110) Mo coated Si substrates were used and no intentional substrate heating was employed. The crystalline texture of the AlN films was determined with various XRD techniques.
Although the deposition rates with HiPIMS are generally lower than those with PDCS, the transition from metal to compound mode spans over a significantly larger range of N2 gas flow. Therefore, with HiPIMS it is possible to deposit stoichiometric AlN in the transition region at deposition rates comparable with PDCS. Owing to the increased energy input in the HiPIMS process, the film texture is improved which is especially pronounced at low film thicknesses.
Place, publisher, year, edition, pages
AlN, Thin films, HiPIMS
Manufacturing, Surface and Joining Technology
IdentifiersURN: urn:nbn:se:uu:diva-234702OAI: oai:DiVA.org:uu-234702DiVA: diva2:757624
14th International Conference on Plasma Surface Engineering, September 15 - 19, 2014, Garmisch-Partenkirchen, Germany