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Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain Epitaxy
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2014 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563Article in journal, Letter (Refereed) Published
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Engineering and Technology
URN: urn:nbn:se:uu:diva-235237OAI: oai:DiVA.org:uu-235237DiVA: diva2:759476
Available from: 2014-10-30 Created: 2014-10-30 Last updated: 2014-10-30

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