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Dissociative sticking of O-2 on Al(111)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Chalmers University of Technology.
Chalmers University of Technology.
1997 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 55, no 23, 15452-15455 p.Article in journal (Refereed) Published
Abstract [en]

The dissociative sticking probability, S-0, of O-2 on Al(111) has been measured as a function of incident translational and vibrational energy. S-0 rises from approximate to 10(-2) for energies approximate to 30 meV to near unity in the range 0.6-2.0 eV, demonstrating an activated dissociation event. Vibrational excitation enhances the sticking. Surface temperature has no effect on S-0. A peculiar dependence on polar angle is observed. The results are used to discuss possible mechanisms for the recent observation [H. Brune et al. Phys. Rev. Lett. 68, 624 (1992)] of widely separated O atoms after O-2 dissociation on Al(111).

Place, publisher, year, edition, pages
1997. Vol. 55, no 23, 15452-15455 p.
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URN: urn:nbn:se:uu:diva-235938DOI: 10.1103/PhysRevB.55.15452ISI: A1997XH33500030OAI: oai:DiVA.org:uu-235938DiVA: diva2:762465
Available from: 2014-11-11 Created: 2014-11-11 Last updated: 2014-11-11

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Österlund, Lars
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