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Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Ion Physics. Jonfysik.
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2003 (English)In: J. Appl. Phys., Vol. 93, no 4, 7- p.Article in journal (Refereed) Published
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2003. Vol. 93, no 4, 7- p.
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URN: urn:nbn:se:uu:diva-48484OAI: oai:DiVA.org:uu-48484DiVA: diva2:76390
Available from: 2007-04-19 Created: 2007-04-19 Last updated: 2011-01-13

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Possnert, G

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