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The influence of precursor Cu content and two-stage processing conditions on the microstructure of Cu2ZnSnSe4
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0002-0501-8969
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2015 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 582, 220-223 p.Article in journal (Refereed) Published
Abstract [en]

This paper reports the influence of processing temperature on the microstructure of Cu2ZnSnSe4 (CZTSe) absorber layers for temperatures between 380 and 550 °C produced using a 2-stage process. X-ray diffraction analysis showed the formation of Cu2ZnSnSe4 over this temperatures range. The Williamson–Hall method was used for microstructural analysis of the CZTSe absorbers, and this showed a progressive decrease of the micro-strain of the CZTSe with increasing selenisation temperature. The influence of precursor Cu content on the microstructure of the CZTSe was also studied. An increase of Cu content in the precursor is correlated to an increase in grain size and a decrease in micro-strain. Raman measurements show an asymmetrical broadening towards lower energies of the main 197 cm− 1 mode for Cu-poor compositions. This study provides an insight into the dependency of the crystallinity of CZTSe on composition and synthesis temperature.

Place, publisher, year, edition, pages
2015. Vol. 582, 220-223 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Other Materials Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-236735DOI: 10.1016/j.tsf.2014.11.028ISI: 000352225900047OAI: oai:DiVA.org:uu-236735DiVA: diva2:765295
Funder
EU, FP7, Seventh Framework Programme, 316488
Available from: 2014-11-21 Created: 2014-11-21 Last updated: 2017-12-05Bibliographically approved

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Ren, Yi

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